Hong Duc University Journal of Science, S. 3 (2017)

Cỡ chữ:  Nhỏ  Vừa  Lớn

PRELIMINARY STUDY ON GeTe-SbTe AND Sm-B TOPOLOGICAL INSULATORS

Nguyen Thi Le Thi, Nguyen Manh An, Le Viet Bau, Le Thi Giang, Nguyen Hoang Ha, Luu Duc Hoan, Do Bang

Tóm tắt


The process of developing the field of materials science is often driven by the discovery of new advanced materials. Especially, the material characteristics and uniformity of quantum mechanics are considered the most important. Of which, the topological insulator material with electrical insulation in the bulk but high conductivity on the surface has been extensively investigated as a new research direction in recent years due to its interesting properties that can be applied in spintronic applications. In this work, we investigate structural and electrical property of topological insulator materials of [(GeTe) 2 (Sb 2 Te 3 ) 1 ] n (GTST) multilayers which were fabricated on the Si wafers using a helicon-wave sputtering system and SmB 6 single crystals grown by the Aluminum-flux method;

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